Appl. Phys. Lett. 99, 243504 (2011); doi:10.1063/1.3670321 (4 pages)
V. V. Popov1,2, D. V. Fateev1,2, T. Otsuji3, Y. M. Meziani4, D. Coquillat5, and W. Knap5
1Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), 410019 Saratov, Russia
2Saratov State University, 410012 Saratov, Russia
3Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
4Dpto. de Fisica Aplicada, Universidad de Salamanca, Pza de la Merced s/n, 37008 Salamanca, Spain
5Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel.
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